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arXiv · 2210.16727

Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers

W. G. Wang·C. Ni·A. Ozbay·L. R. Shah·X. Fan·X. M. Kou·E. R. Nowak·J. Q. Xiao
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Abstract

Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to spin-dependent tunneling effect. Temperature dependent study indicated that the total conductance of the junction is dominated by direct tunneling, with only a small portion from the hopping conduction through the defect states inside the barrier.

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W. G. Wang, C. Ni, A. Ozbay, L. R. Shah, X. Fan, X. M. Kou, E. R. Nowak, J. Q. Xiao. 2022-10-30. Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers. https://arxiv.org/abs/2210.16727

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