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arXiv · 2211.06165

Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices

Wen Jin·Gaojie Zhang·Hao Wu·Li Yang·Wenfeng Zhang·Haixin Chang
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Abstract

Spin-valve effect has been the focus of spintronics over the last decades due to its potential in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly expected to build the spin-valve heterojunction. However, the Curie temperatures (TC) of the vdW ferromagnetic 2D crystals are mostly below room temperature (~30-220 K). It is very challenging to develop room temperature, ferromagnetic (FM) 2D crystals based spin-valve devices which are still not available to date. We report the first room temperature, FM 2D crystal based all-2D vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin valve devices. The Magnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97% at 10 K, 4-30 times of MR from the spin valves of Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ and conventional NiFe/MoS$_2$/NiFe. Typical spin valve effect shows strong dependence on MoS2 spacer thickness in the vdW heterojunction. Importantly, the spin valve effect (0.31%) still robustly exists at 300 K with low working currents down to 10 nA (0.13 A/cm$^2$). The results provide a general vdW platform to room temperature, 2D FM crystals based 2D spin valve devices.

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Wen Jin, Gaojie Zhang, Hao Wu, Li Yang, Wenfeng Zhang, Haixin Chang. 2022-11-11. Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices. https://doi.org/10.1039/d2nr06886a

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