Thermal resistance from non-equilibrium phonons at Si-Ge interface

Xun Li; Jinchen Han; Sangyeop Lee

doi:10.1016/j.mtphys.2023.101063

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arXiv · 2212.05915

Thermal resistance from non-equilibrium phonons at Si-Ge interface

Xun Li·Jinchen Han·Sangyeop Lee

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Abstract

As nanostructured devices become prevalent, interfaces often play an important role in thermal transport phenomena. However, interfacial thermal transport remains poorly understood due to complex physics across a wide range of length scales from atomistic to microscale. Past studies on interfacial thermal resistance have focused on interface-phonon scattering at the atomistic scale but overlooked the complex interplay of phonon-interface and phonon-phonon scattering at microscale. Here, we use the Peierls-Boltzmann transport equation to show that the resistance from the phonon-phonon scattering of non-equilibrium phonons near a Si-Ge interface is much larger than that directly caused by the interface scattering. We report that non-equilibrium in phonon distribution leads to significant entropy generation and thermal resistance upon three-phonon scattering by the Boltzmann's H-theorem. The physical origin of non-equilibrium phonons in Ge is explained with the mismatch of phonon dispersion, density-of-states, and group velocity, which serve as general guidance for estimating the non-equilibrium effect on interfacial thermal resistance. Our study bridges a gap between atomistic scale and less studied microscale phenomena, providing comprehensive understanding of overall interfacial thermal transport and the significant role of phonon-phonon scattering.

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Xun Li, Jinchen Han, Sangyeop Lee. 2022-12-03. Thermal resistance from non-equilibrium phonons at Si-Ge interface. https://doi.org/10.1016/j.mtphys.2023.101063

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