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arXiv · 2212.14078

Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators

Birkan Düzel·Christian Riha·Karl Graser·Olivio Chiatti·Saskia F. Fischer
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Abstract

Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ single crystals show gapless topological surface states and doping ($x$) with Vanadium allows to shift the chemical potential in the bulk band gap. Accordingly, the resistivity, carrier density, and mobility are constant below 10 K and the magnetoresistance shows weak antilocalization as expected for low-temperature transport properties dominated by gapless surface states of so-called three-dimensional topological "insulators". However, the magnetoresistance also shows a hysteresis depending on the sweep rate and the magnetic field direction. Here, we provide evidence that such magnetoresistance hysteresis is enhanced if both three-dimensional bulk states and quasi-two-dimensional topological states contribute to the transport ($x$ = 0 and 0.03), and it is mostly suppressed if the topological states govern transport ($x$ = 0.015). The results are discussed in terms of spin-dependent scattering between the different available states

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Birkan Düzel, Christian Riha, Karl Graser, Olivio Chiatti, Saskia F. Fischer. 2022-12-28. Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators. https://doi.org/10.1063/5.0203789

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