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arXiv · 2301.00568

Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device

Debopriya Dutta·Subhrajit Mukherjee·Michael Uzhansky·Pranab K. Mohapatra·Ariel Ismach·Elad Koren
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Abstract

Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile conduction states in partially overlapping alpha-In2Se3-MoS2 based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of alpha-In2Se3 allows to non-volatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for sub-nanometric scale non-volatile device miniaturization. Furthermore the induced asymmetric polarization enables enhanced photogenerated carriers separation resulting in extremely high photoresponse of 1275 AW-1 in the visible range and strong non-volatile modulation of the bright A- and B- excitonic emission channels in the overlaying MoS2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlapping alpha-In2Se3-MoS2 based FeFETs to engineer multimodal non-volatile nanoscale electronic and optoelectronic devices.

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Debopriya Dutta, Subhrajit Mukherjee, Michael Uzhansky, Pranab K. Mohapatra, Ariel Ismach, Elad Koren. 2023-01-02. Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device. https://arxiv.org/abs/2301.00568

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