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arXiv · 2301.13564

Superconducting Diode Effect -- Fundamental Concepts, Material Aspects, and Device Prospects

Abstract

Superconducting diode effect, in analogy to the nonreciprocal resistive charge transport in semiconducting diode, is a nonreciprocity of dissipationless supercurrent. Such an exotic phenomenon originates from intertwining between symmetry-constrained supercurrent transport and intrinsic quantum functionalities of helical/chiral superconductors. In this article, research progress of superconducting diode effect including fundamental concepts, material aspects, device prospects, and theoretical/experimental development is reviewed. First, fundamental mechanisms to cause superconducting diode effect including simultaneous space-inversion and time-reversal symmetry breaking, magnetochiral anisotropy, interplay between spin-orbit interaction energy and the characteristic energy scale of supercurrent carriers, and finite-momentum Cooper pairing are discussed. Second, the progress of superconducting diode effect from theoretical predictions to experimental observations are reviewed. Third, interplay between various system parameters leading to superconducting diode effect with optimal performance is presented. Then, it is explicitly highlighted that nonreciprocity of supercurrent can be characterized either by current-voltage relation obtained from resistive direct-current measurements in the metal-superconductor fluctuation region ($T\approx T_c$) or by current-phase relation and nonreciprocity of superfluid inductance obtained from alternating-current measurements in the superconducting phase ($T<T_c$). Finally, insight into future directions in this active research field is provided with a perspective analysis on intertwining between band-topology and helical superconductivity, which could be useful to steer the engineering of emergent topological superconducting technologies.

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Muhammad Nadeem, Michael S. Fuhrer, Xiaolin Wang. 2023-01-31. Superconducting Diode Effect -- Fundamental Concepts, Material Aspects, and Device Prospects. https://arxiv.org/abs/2301.13564

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