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arXiv · 2302.07642

Modeling of parallel power MOSFETs in steady-state

Minh Nhat Huynh·Minh Khoi Nguyen Tien·Cong Toai Truong·Minh Tri Nguyen·Quoc Minh Lam·Van Tu Duong·Huy Hung Nguyen·Tan Tien Nguyen
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Abstract

In high-power applications, multiple power MOSFETs are connected in parallel and treated as a single switch in order to handle much larger total currents. In this paper, a parallel power MOSFETs model from the turnoff state until they reach their steady state is introduced. The model represents the relationship between each power MOSFET's gate voltage and the current distribution among them. The study's key purpose is to use the model for dealing with the asymmetry in sharing current and power loss between these semiconductor devices during the steady state region.

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Minh Nhat Huynh, Minh Khoi Nguyen Tien, Cong Toai Truong, Minh Tri Nguyen, Quoc Minh Lam, Van Tu Duong, Huy Hung Nguyen, Tan Tien Nguyen. 2023-02-15. Modeling of parallel power MOSFETs in steady-state. https://arxiv.org/abs/2302.07642

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