SearcharxivSearch

arXiv · 2302.08739

Significantly increased magnetic anisotropy in Co nano-columnar multilayer structure via a unique sequential oblique-normal deposition approach

Abstract

Oblique/normal sequential deposition technique is used to create Co based unique multilayer structure [Co-oblique(4.4nm)/Co-normal (4.2 nm)]x10, where each Co-oblique layer is deposited at an oblique angle of 75deg, to induce large in-plane uniaxial magnetic anisotropy (UMA). Compared to the previous ripple, stress and oblique angle deposition (OAD) related studies on Cobalt in literature, one-order higher UMA with the easy axis of magnetization along the projection of the tilted nano-columns in the multilayer plane is observed. The multilayer retains magnetic anisotropy even after annealing at 450C. The in-plane UMA in this multilayer is found to be the combination of shape, and magneto-crystalline anisotropy (MCA) confirmed by the temperature-dependent grazing incidence small angle X-ray scattering (GISAXS), in situ reflection high energy electron diffraction (RHEED) and grazing incidence X-ray diffraction (GIXRD) measurements. The crystalline texturing of hcp Co in the multilayer minimizes spin-orbit coupling energy along the column direction, which couples with the shape anisotropy energies and results in preferential orientation of the easy magnetic axis along the projection of the columns in the multilayer plane. Reduction in UMA after annealing is attributed to diffusion/merging of columns and annihilating crystallographic texturing. The obtained one-order high UMA demonstrates the potential application of the unique structure engineering technique, which may have far-reaching advantages in magnetic thin films/multilayers and spintronic devices.

Explore related subjects

Keep this discovery

BibTeXRIS

Arun Singh Dev, Sharanjeet Singh, Anup Kumar Bera, Pooja Gupta, Velaga Srihari, Pallavi Pandit, Matthias Schwartzkopf, Stephan V. Roth, Dileep Kumar. 2023-02-17. Significantly increased magnetic anisotropy in Co nano-columnar multilayer structure via a unique sequential oblique-normal deposition approach. https://arxiv.org/abs/2302.08739

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci