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arXiv · 2302.09407

Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices

Georgii Paradezhenko·Dmitrii Prodan·Anastasiia Pervishko·Dmitry Yudin·Anis Allagui
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Abstract

We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We extend the dynamics of the state variable originally described by a first-order time derivative by introducing a fractional derivative with an arbitrary order between zero and one. We show that the extended model fits with great fidelity the current-voltage characteristic data obtained on a Si electrochemical metallization memory device with Ag-Cu alloy.

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Georgii Paradezhenko, Dmitrii Prodan, Anastasiia Pervishko, Dmitry Yudin, Anis Allagui. 2023-02-18. Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices. https://arxiv.org/abs/2302.09407

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