SearcharxivSearch

arXiv · 2302.09950

Combination effect of growth enhancers and carbon sources on synthesis of single-walled carbon nanotubes from solid carbon growth seeds

Abstract

In the synthesis of highly crystalline single-walled carbon nanotubes (SWCNTs), high growth temperatures are preferred, while the formation of impurity amorphous carbon (a-C) causes the termination of SWCNT growth and degrades its properties. To remove this by-product, H2O and CO2 have been employed in metal-catalyzed SWCNT growth systems because of their oxidizing ability. Recently, nonmetallic nanoparticles have become one of the growth seed candidates because of their high melting points and fewer metal impurities. In this study, by using nanodiamond-derived carbon nanoparticles as the solid growth seeds, we investigated the effect of CO2 and H2O on high-temperature SWCNT growth with two types of carbon-source supplies: C2H2 and C2H4. In this growth system, H2O showed oxidizing ability to etch a-C with either carbon sources. CO2 exhibited a similar a-C formation-preventing role in C2H4-supplied growth and achieved higher-purity SWCNTs with higher concentration of C2H4 than the case of H2O. However, in contrast to the other combinations, CO2 injection in the C2H2-supplied growth significantly enhanced the formation of a-C rather than the removal of it while the yield of SWCNTs was also increased, indicating the occurrence of the dehydration reaction between CO2 and C2H2. The present findings will lead to efficient growth of high-quality SWCNTs from nonmetallic growth seeds with the use of growth enhancers.

Explore related subjects

Keep this discovery

BibTeXRIS

Mengyue Wang, Yuanjia Liu, Manaka Maekawa, Michiharu Arifuku, Noriko Kiyoyanagi, Taiki Inoue, Yoshihiro Kobayashi. 2023-02-20. Combination effect of growth enhancers and carbon sources on synthesis of single-walled carbon nanotubes from solid carbon growth seeds. https://doi.org/10.1016/j.diamond.2022.109516

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci