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arXiv · 2302.11492

Hybrid integrated near UV lasers using the deep-UV Al2O3 platform

C. A. A. Franken·W. A. P. M. Hendriks·L. V. Winkler·M. Dijkstra·A. R. do Nascimento Jr·A. van Rees·M. R. S. Mardani·R. Dekker·J. van Kerkhof·P. J. M. van der Slot·S. M. García-Blanco·K. -J. Boller
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Abstract

Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.

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C. A. A. Franken, W. A. P. M. Hendriks, L. V. Winkler, M. Dijkstra, A. R. do Nascimento Jr, A. van Rees, M. R. S. Mardani, R. Dekker, J. van Kerkhof, P. J. M. van der Slot, S. M. García-Blanco, K. -J. Boller. 2023-02-22. Hybrid integrated near UV lasers using the deep-UV Al2O3 platform. https://doi.org/10.1038/s41467-025-65211-2

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