Mechanisms of SiO oxidation: Implications for dust formation

Abstract

Reactions of SiO molecules have been postulated to initiate efficient formation of silicate dust particles in outflows around dying (AGB) stars. Both OH radicals and H$_2$O molecules can be present in these environments and their reactions with SiO and the smallest SiO cluster, Si$_2$O$_2$, affect the efficiency of eventual dust formation. Rate coefficients of gas-phase oxidation and clustering reactions of SiO, Si$_2$O$_2$ and Si$_2$O$_3$ have been calculated using master equation calculations based on density functional theory calculations. The calculations show that the reactions involving OH are fast. Reactions involving H$_2$O are not efficient routes to oxidation but may under the right conditions lead to hydroxylated species. The reaction of Si$_2$O$_2$ with H$_2$O, which has been suggested as efficient producing Si$_2$O$_3$, is therefore not as efficient as previously thought. If H$_2$O molecules dissociate to form OH radicals, oxidation of SiO and dust formation could be accelerated. Kinetics simulations of oxygen-rich circumstellar environments using our proposed reaction scheme suggest that under typical conditions only small amounts of SiO$_2$ and Si$_2$O$_2$ are formed and that most of the silicon remains as molecular SiO.