Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

Igor V. Rozhansky; Ina V. Kalitukha; Grigorii S. Dimitriev; Olga S. Ken; Mikhail V. Dorokhin; Boris N. Zvonkov; Dmitri S. Arteev; Nikita S. Averkiev; Vladimir L. Korenev

doi:10.1021/acs.nanolett.3c00769

arXiv · 2304.08195

Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

Igor V. Rozhansky·Ina V. Kalitukha·Grigorii S. Dimitriev·Olga S. Ken·Mikhail V. Dorokhin·Boris N. Zvonkov·Dmitri S. Arteev·Nikita S. Averkiev·Vladimir L. Korenev

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Abstract

Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows to resolve the dynamic FM proximity effect on a nanometer scale. The method can be generalized on various systems including rapidly developing 2D van der Waals materials.

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Igor V. Rozhansky, Ina V. Kalitukha, Grigorii S. Dimitriev, Olga S. Ken, Mikhail V. Dorokhin, Boris N. Zvonkov, Dmitri S. Arteev, Nikita S. Averkiev, Vladimir L. Korenev. 2023-04-17. Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure. https://doi.org/10.1021/acs.nanolett.3c00769

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