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arXiv · 2304.08504

Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing

Shubham Patil·Jayatika Sakhuja·Ajay Kumar Singh·Anmol Biswas·Vivek Saraswat·Sandeep Kumar·Sandip Lashkare·Udayan Ganguly
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Abstract

Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFET-based ultra-low power voltage-controlled current source to enable real-time neurons for neuromorphic computing. Schottky-Barrier MOSFET is fabricated on a Silicon-on-insulator platform with polycrystalline Silicon as the channel and Nickel/Platinum as the source/drain. The Poly-Si and Nickel make the back-to-back Schottky junction enabling ultra-low ON current required for energy-efficient neurons.

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Shubham Patil, Jayatika Sakhuja, Ajay Kumar Singh, Anmol Biswas, Vivek Saraswat, Sandeep Kumar, Sandip Lashkare, Udayan Ganguly. 2023-04-17. Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing. https://arxiv.org/abs/2304.08504

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