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arXiv · 2304.11345

Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Ying-Chuan Chen·Yu-Ting Chao·Edward Chen·Chao-Hsin Wu·Yuh-Renn Wu
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Abstract

Resistive memory based on 2D WS2, MoS2, and h-BN materials has been studied, including experiments and simulations. The influences with different active layer thicknesses have been discussed, including experiments and simulations. The thickness with the best On/Off ratio is also found for the 2D RRAM. This work reveals fundamental differences between a 2D RRAM and a conventional oxide RRAM. Furthermore, from the physical parameters extracted with the KMC model, the 2D materials have a lower diffusion activation energy from the vertical direction, where a smaller bias voltage and a shorter switching time can be achieved. It was also found the diffusion activation energy from the CVD-grown sample is much lower than the mechanical exfoliated sample. The result shows MoS2 has the fastest switching speed among three 2D materials.

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BibTeXRIS

Ying-Chuan Chen, Yu-Ting Chao, Edward Chen, Chao-Hsin Wu, Yuh-Renn Wu. 2023-04-22. Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations. https://doi.org/10.1103/physrevmaterials.7.094001

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