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arXiv · 2304.12038

Photovoltaic cell based on n-ZnO microrods and p-GaN film

Vlad Vasilyev·Borys Turko·Bogdan Sadovyi·Volodymyr Kapustianyk·Y. Eliyashevskyi·Roman Serkiz
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Abstract

The photovoltaic cell based on p-GaN film/n-ZnO micro rods quasi array heterojunction was fabricated. According to the scanning electron microscopy data, the ZnO array consisted of the tightly packed vertical micro rods with a diameter of approximately 2-3 {\mu}m. The turn-on voltage of the heterojunction of ZnO/GaN (rods/film) was around 0.6 V. The diode-ideality factor was estimated to be of around 4. The current-voltage characteristic of the photovoltaic cell under UV LED illumination showed an open-circuit voltage of 0.26 V, a short-circuit current of 0.124 nA, and a fill factor of 39 %, resulting in an overall efficiency of 1.4*10(^-5) %.

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Vlad Vasilyev, Borys Turko, Bogdan Sadovyi, Volodymyr Kapustianyk, Y. Eliyashevskyi, Roman Serkiz. 2023-04-24. Photovoltaic cell based on n-ZnO microrods and p-GaN film. https://arxiv.org/abs/2304.12038

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