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arXiv · 2304.12712

Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS$_4$ transistors

Fan Wu·Marco Gibertini·Kenji Watanabe·Takashi Taniguchi·Ignacio Gutiérrez-Lezama·Nicolas Ubrig·Alberto F. Morpurgo
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Abstract

Transistors realized on 2D antiferromagnetic semiconductor CrPS$_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior -- carrier mobility and threshold voltage -- with temperature and magnetic field. For temperatures T near the N\'eel temperature $T_N$, the magnetoconductance originates from a mobility increase due to the applied magnetic field that reduces spin fluctuation induced disorder. For $T << T_N$, instead, what changes is the threshold voltage, so that increasing the field at fixed gate voltage increases the density of accumulated electrons. The phenomenon is explained by a conduction band-edge shift correctly predicted by \emph{ab-initio} calculations. Our results demonstrate that the bandstructure of CrPS$_4$ depends on its magnetic state and reveal a mechanism for magnetoconductance that had not been identified earlier.

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Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo. 2023-04-25. Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS$_4$ transistors. https://doi.org/10.1021/acs.nanolett.3c02274

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