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arXiv · 2305.05866

Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride

Angus Gale·Dominic Scognamiglio·Ivan Zhigulin·Benjamin Whitefield·Mehran Kianinia·Igor Aharonovich·Milos Toth
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Abstract

Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate charge state switching of $\small{V_B}$ defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states ($\small{V_B^- \rightleftharpoons V_B^0 + e^-}$), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the $\small{V_B}$ charge state, and to stabilize the -1 state which is a prerequisite for optical spin manipulation and readout of the defect.

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Angus Gale, Dominic Scognamiglio, Ivan Zhigulin, Benjamin Whitefield, Mehran Kianinia, Igor Aharonovich, Milos Toth. 2023-05-10. Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride. https://doi.org/10.1021/acs.nanolett.3c01678

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