Magnetoresistive RAM with n-doped AlGaAs/GaAs writing/reading channels

Sushmita Saha; Deepak Sain; Alestin Mawrie

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arXiv · 2305.08565

Magnetoresistive RAM with n-doped AlGaAs/GaAs writing/reading channels

Sushmita Saha·Deepak Sain·Alestin Mawrie

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Abstract

We show that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is a key in designing an efficient and ultrafast MRAM (magnetoresistive random access memory). The Rashba spin-orbit coupling in such QWs can be tuned appropriately by the gate voltage to create an intense spin-Hall field which in turns interacts with the ferromagnetic layer of the MRAM through the mechanism of spin orbit torque. The strong spin-Hall field leads to an infinitesimally small switching time of the MRAM. Our proposed MRAM is thus a better alternative to the conventional ferromagnetic/spin-Hall effect bi-layers MRAM for the reason that the switching time can be varied with ease, which is unfeasible in the later. Concisely, not only that this work signals a possibility to design an ultra-fast MRAM, but it also suggests a model to fabricate a tunable switching time MRAM.

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Sushmita Saha, Deepak Sain, Alestin Mawrie. 2023-05-15. Magnetoresistive RAM with n-doped AlGaAs/GaAs writing/reading channels. https://arxiv.org/abs/2305.08565

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