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arXiv · 2306.08911

Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs

Yang Shen·Bing-Yang Cao
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Abstract

We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With microscopic phonon-based electrothermal simulations, we scrutinize both the temperature profiles and electrothermal coupling effect within GaN HEMTs. Two metrics, maximum channel temperature ($T_\text{max}$) and equivalent channel temperature ($T_\text{eq}$), are introduced to measure the reliability and electrical performance degradation of the device, respectively. The influence of bias-dependent heat generation and phonon ballistic transport on the two indicators is thoroughly examined.

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Yang Shen, Bing-Yang Cao. 2023-06-15. Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs. https://doi.org/10.1063/5.0189262

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