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arXiv · 2306.14171

Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe$_2$ FETs

Yinjiang Shao·Jian Zhou·Ning Xu·Jian Chen·Kenji Watanabe·Takashi Taniguchi·Yi Shi·Songlin Li
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Abstract

Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_2$ field-effect transistors (FETs) that are simultaneously van der Waals contacted with gold electrodes and are fully encapsulated in ultraclean hexagonal boron nitride dielectrics. The FETs exhibit electronically favorable channel/dielectric interfaces with low densities of interfacial traps ($10^{10}\,$cm$^{-2}$), which lead to outstanding device characteristics at room temperature, including a near-Boltzmann-limit subthreshold swings ($\lt65\,$mV/dec), a high carrier mobility ($68\,$cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$), and a negligible scanning hysteresis ($\lt15\,$mV). The dependence of various contact-related quantities on temperature and carrier density are also systematically characterized to understand the van der Waals contacts between gold and MoSe$_2$. The results provide insightful information on the device physics in van der Waals contacted and encapsulated 2D FETs.

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Yinjiang Shao, Jian Zhou, Ning Xu, Jian Chen, Kenji Watanabe, Takashi Taniguchi, Yi Shi, Songlin Li. 2023-06-25. Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe$_2$ FETs. https://doi.org/10.1088/0256-307x%2F40%2F6%2F068501

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