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arXiv · 2307.01114

First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials

S. -C. Lee·Y. -T. Chen·C. -R. Liu·S. -M. Wang·Y. -T. Tang·F. -S. Chang·Z. -X. Li·K. -Y. Hsiang·M. -H. Lee
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Abstract

Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.

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S. -C. Lee, Y. -T. Chen, C. -R. Liu, S. -M. Wang, Y. -T. Tang, F. -S. Chang, Z. -X. Li, K. -Y. Hsiang, M. -H. Lee. 2023-06-01. First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials. https://arxiv.org/abs/2307.01114

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