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arXiv · 2307.04476

Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Kento Sasaki·Takashi Taniguchi·Kensuke Kobayashi
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Abstract

There has been growing interest in studying hexagonal boron nitride (hBN) for quantum technologies. Here, we investigate nitrogen isotope effects on boron vacancy (V$_\text{B}$) defects, one of the candidates for quantum sensors, in $^{15}$N isotopically enriched hBN synthesized using a metathesis reaction. The Raman shifts are scaled with the reduced mass, consistent with previous work on boron isotope enrichment. We obtain nitrogen isotopic composition-dependent magnetic resonance spectra of V$_\text{B}$ defects and determine the magnitude of the hyperfine interaction parameter of $^{15}$N spin to be 64 MHz. Our investigation provides a design policy for hBNs for quantum sensing.

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Kento Sasaki, Takashi Taniguchi, Kensuke Kobayashi. 2023-07-10. Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride. https://doi.org/10.35848/1882-0786%2Facf7aa

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