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arXiv · 2307.10473

Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO

Hojoon Ryu·Junzhe Kang·Minseong Park·Byungjoon Bae·Zijing Zhao·Shaloo Rakheja·Kyusang Lee·Wenjuan Zhu
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Abstract

In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit non-volatile memory windows of ~1 V, low off-state drain currents, and high carrier mobilities. The ferroelectric CIPS layer serves a dual purpose by providing electrostatic doping in IZO and acting as a passivation layer for the IZO channel. We also investigate the CIPS/IZO FeFETs as artificial synaptic devices for neural networks. The CIPS/IZO synapse demonstrates a sizeable dynamic ratio (125) and maintains stable multi-level states. Neural networks based on CIPS/IZO FeFETs achieve an accuracy rate of over 80% in recognizing MNIST handwritten digits. These ferroelectric transistors can be vertically stacked on silicon CMOS with a low thermal budget, offering broad applications in CMOS+X technologies and energy-efficient 3D neural networks.

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Hojoon Ryu, Junzhe Kang, Minseong Park, Byungjoon Bae, Zijing Zhao, Shaloo Rakheja, Kyusang Lee, Wenjuan Zhu. 2023-07-19. Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO. https://arxiv.org/abs/2307.10473

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