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arXiv · 2308.06903

Superior surface modification layer of poly(styrene) on SiO$_2$ gate insulator in rubrene single crystal field-effect transistor

Hua-Xue Zhou·Chong-Li Yang·Shi-Lin Li·Shota Kobayashi·Qifeng Yao·Katsumi Tanigaki·Hidekazu Shimotani
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Abstract

We conduct comparative research on the density of states of electron- and hole- carrier trap levels (DTR(E)), dispersing inside the energy gap of a rubrene single crystal in a field effect transistor (FET) struction with Ca and Au hetero-electrodes for an ambipolar carrier injection mode, by using polymeric protection-layer materials on a Si substrate. Three different types of polymeric materials, poly(methyl-methacrylate) (PMMA), poly(styrene) (PS) and poly(chloro-styrene) (PCS) are employed. From the temperature (T)-dependent source-drain current and gate voltage (ISD-VG) transfer characteristics, the values of DTR(E) are evaluated. PS exhibits the most efficiently-balanced ambipolar carrier transport, which is superior to PMMA that is most typically used as the standard protection layer on a SiO$_2$/doped-Si substrate. Discussions are made in the framework of a carrier multiple trap and release (CMTR) model.

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Hua-Xue Zhou, Chong-Li Yang, Shi-Lin Li, Shota Kobayashi, Qifeng Yao, Katsumi Tanigaki, Hidekazu Shimotani. 2023-08-14. Superior surface modification layer of poly(styrene) on SiO$_2$ gate insulator in rubrene single crystal field-effect transistor. https://arxiv.org/abs/2308.06903

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