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arXiv · 2308.13912

Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects

Daniel Lizzit·Thomas Bernardi·David Esseni
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Abstract

This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read conductance values experimentally observed in FeFETs stem from source to drain percolation current paths, which are governed by the polarization patterns in the ferroelectric domains. Such a physical picture makes 3D simulations indispensable to capture even the qualitative features of the device behaviour, not to mention the quantitative aspects.

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Daniel Lizzit, Thomas Bernardi, David Esseni. 2023-08-26. Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects. https://doi.org/10.1109/essderc55479.2022.9947169

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