Interface disorder as a cause for kinetic Rashba-Edelstein effect and interface Spin-Hall effect at the metal-insulator boundary

A. V. Shumilin; V. V. Kabanov

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arXiv · 2309.02951

Interface disorder as a cause for kinetic Rashba-Edelstein effect and interface Spin-Hall effect at the metal-insulator boundary

A. V. Shumilin·V. V. Kabanov

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Abstract

The spin phenomena observed at a clean metall-insulator interface are typically reduced to Rashba-Edelstein effect, that leads to spin accumulation over a few monolayers. We demonstrate that the presence of interface disorder significantly expands the range of potential phenomena. Specifically, the skew scattering at the metal - insulator boundary gives rise to the "kinetic Rashba-Edelstein effect", where spin accumulation occurs on a much larger length scale comparable to mean free path. Moreover, at higher orders of spin-orbit interaction, skew scattering is accompanied with spin relaxation resulting in the interface spin-Hall effect - a conversion of electrical current to spin current at the metal surface. Unlike the conventional spin-Hall effect, this phenomenon persists even within the Born approximation. These two predicted phenomena can dominate the spin density and spin current in devices of intermediate thickness.

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A. V. Shumilin, V. V. Kabanov. 2023-09-06. Interface disorder as a cause for kinetic Rashba-Edelstein effect and interface Spin-Hall effect at the metal-insulator boundary. https://arxiv.org/abs/2309.02951

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