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arXiv · 2310.01027

Elemental Ferroelectric Topological Insulator in $\psi$-bismuthene

Yan Liang·Xuening Han·Thomas Frauenheim·Fulu Zheng·Pei Zhao
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Abstract

Ferroelectric quantum spin Hall insulator (FEQSHI) exhibits coexisting ferroelectricity and time-reversal symmetry protected edge states, holding fascinating prospects for inviting both scientific and application advances, especially in two dimensions. However, all of the previously demonstrated FEQSHIs consist two or more constituent elements. We herein propose the $\psi$-bismuthene, an uncharted allotrope of bilayer Bi (110), to be the first example of 2D elemental FEQSHI. It is demonstrated that $\psi$-bismuthene harbors measurable ferroelectric polarization and nontrivial band gap with moderate switching barrier, which are highly beneficial for the detection and observation of the ferroelectric topologically insulating states. In addition, all-angle auxetic behavior with giant negative Poisson's ratio and ferroelectric controllable persistent spin helix in $\psi$-bismuthene are also discussed. The emergent elemental FEQSHI represents a novel domain for both fundamental physics and technological innovation.

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Yan Liang, Xuening Han, Thomas Frauenheim, Fulu Zheng, Pei Zhao. 2023-10-02. Elemental Ferroelectric Topological Insulator in $\psi$-bismuthene. https://arxiv.org/abs/2310.01027

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