Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

V. Ryzhii; M. S. Shur; M. Ryzhii; V. Mitin; C. Tang; T. Otsuji

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arXiv · 2310.09741

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

V. Ryzhii·M. S. Shur·M. Ryzhii·V. Mitin·C. Tang·T. Otsuji

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Abstract

We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector response on the incoming THz signal phase shift and the THz radiation angle of incidence.

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V. Ryzhii, M. S. Shur, M. Ryzhii, V. Mitin, C. Tang, T. Otsuji. 2023-10-15. Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer. https://arxiv.org/abs/2310.09741

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