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arXiv · 2310.09849

Solid state defect emitters with no electrical activity

Pei Li·Song Li·Péter Udvarhelyi·Bing Huang·Adam Gali
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Abstract

Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold energy of optical excitation associated with the optical gap of the host semiconductor. It is, therefore, a common assumption that solid state defect emitters in semiconductors ultimately alter the conductivity of the host. Here we demonstrate on a particular defect in 4H silicon carbide that a yet unrecognized class of point defects exists which are optically active but electrically inactive in the ground state.

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Pei Li, Song Li, Péter Udvarhelyi, Bing Huang, Adam Gali. 2023-10-15. Solid state defect emitters with no electrical activity. https://arxiv.org/abs/2310.09849

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