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arXiv · 2310.11317

k-dependent proximity-induced modulation of spin-orbit interaction in MoSe2 interfaced with amorphous Pb

Fatima Alarab·Ján Minár·Procopios Constantinou·Dhani Nafday·Thorsten Schmitt·Xiaoqiang Wang·Vladimir N. Strocov
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Abstract

The ability to modulate the spin-orbit (SO) interaction is crucial for engineering a wide range of spintronics-based quantum devices, extending from state-of-the-art data storage to materials for quantum computing. The use of proximity-induced effects for this purpose may become the mainstream approach, whereas their experimental verification using angle-resolved photoelectron spectroscopy (ARPES) has so far been elusive. Here, using the advantages of soft-X-ray ARPES on its probing depth and intrinsic resolution in three-dimensional momentum k, we identify a distinct modulation of the SO interaction in a van der Waals semiconductor (MoSe2) proximitized to a high-Z metal (Pb), and measure its variation through the k-space. The strong SO field from Pb boosts the SO splitting by up to 30% at the H-point of the bulk Brillouin zone, the spin-orbit hotspot of MoSe2. Tunability of the splitting via the Pb thickness allows its tailoring to particular applications in emerging quantum devices.

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Fatima Alarab, Ján Minár, Procopios Constantinou, Dhani Nafday, Thorsten Schmitt, Xiaoqiang Wang, Vladimir N. Strocov. 2023-10-17. k-dependent proximity-induced modulation of spin-orbit interaction in MoSe2 interfaced with amorphous Pb. https://arxiv.org/abs/2310.11317

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