Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias

Narjes Kheirabadi

doi:10.1016/j.physe.2024.116009

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arXiv · 2311.00331

Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias

Narjes Kheirabadi

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Abstract

Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in-plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is possible by an applied in-plane magnetic field and an electrical bias in bilayer graphene. Our results are promising for the exploration of new topological phenomena in 2D materials.

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Narjes Kheirabadi. 2023-11-01. Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias. https://doi.org/10.1016/j.physe.2024.116009

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