arXiv · 2311.02885
Resonant tunneling and quantum interference of a two-spin system in silicon tunnel FETs
Abstract
We investigated the resonant tunneling of a two-spin system through the double quantum dots in Al-N-implanted silicon tunnel FETs (TFETs) by electrical-transport measurements and Landau-Zener-St\"{u}ckelberg-Majorana interferometry with and without magnetic fields. Our experimental results revealed the coexistence of spin-conserving and spin-flip tunneling channels in the two-spin system in non-zero magnetic fields. Additionally, we obtained the spin-conserving/spin-flip tunneling rates of the two-spin system through the double quantum dots in the TFET. These findings will improve our understanding of the two-spin system in silicon TFET qubits and may facilitate the coherent control of quantum states through all-electric manipulation.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Satoshi Moriyama, Takahiro Mori, Keiji Ono. 2023-11-06. Resonant tunneling and quantum interference of a two-spin system in silicon tunnel FETs. https://doi.org/10.35848/1882-0786%2Fad0500
Cite the original work for its findings. Save a collection to share your selection of sources.