SearcharxivSearch

arXiv · 2311.14466

Ferroelectricity and chirality in the Pb$_5$Ge$_3$O$_{11}$ crystal

Abstract

We study from first-principles calculations the ferroelectric structural phase transition of Pb$_5$Ge$_3$O$_{11}$ crystal. The calculations of phonons and Born effective charges of the paraelectric phase allow us to identify a polar instability that is unstable in both transverse-optic and longitudinal-optic versions, giving rise to an entire branch of instability along a propagation vector parallel to the mode polarization (the hexagonal axe). This is the hint of hyperferroelectricity and the stable head-to-head and tail-to-tail domain, as recently reported from both experiments and theory. Then, our analysis of the ferroelectric phase shows that the polarization of Pb$_5$Ge$_3$O$_{11}$ is uniaxial along the hexagonal axes and with small in-plane components due to a piezoelectric effect. The symmetry-adapted mode analysis shows that the total ferroelectric ground state distortion comes mainly from polar distortions of the unstable polar phonon mode but also from an invariant, cooperative mode that amplifies the polar deformation. We also build a phenomenological model that highlights how the coupling between these modes is at play and helps us understand how to reproduce the second-order phase transition. At last, we also quantify the structural chirality through the continuous symmetry measure method and trace its origin to the polar unstable mode itself. By extending our approach to the phonon states we further show that the chirality is poorly affected by the relaxation but could also be enhanced by activating high frequency modes with polar symmetry. Finally we study the phonon angular momentum (AM) distribution in both phases and identify trends in the AM behaviour across the Brillouin zone.

Explore related subjects

Keep this discovery

BibTeXRIS

Mauro Fava, William Lafargue-Dit-Hauret, Aldo H. Romero, Eric Bousquet. 2023-11-24. Ferroelectricity and chirality in the Pb$_5$Ge$_3$O$_{11}$ crystal. https://arxiv.org/abs/2311.14466

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci