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arXiv · 2311.16323

Robust Diamond/\b{eta}-Ga2O3 Hetero-p-n-junction Via Mechanically Integrating Their Building Blocks

Imteaz Rahaman·Hunter D. Ellis·Kai Fu
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Abstract

We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature, exhibits resilient electrical performance across a temperature spectrum up to 125{\deg}C, displaying minimal hysteresis-measuring as low as 0.2 V at room temperature and below 0.7 V at 125{\deg}C. Remarkably, the ideality factor achieves a record low value of 1.28, setting a new benchmark for diamond/ \b{eta}-Ga2O3 heterojunctions. The rectification ratio reaches over 10^8 at different temperatures. This effortlessly fabricated and remarkably resilient diamond/Ga2O3 hetero-p-n-junction pioneers a novel pathway for the exploration and fabrication of heterojunctions for ultra-wide bandgap semiconductors with substantial lattice mismatch and different thermal expansion coefficients.

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Imteaz Rahaman, Hunter D. Ellis, Kai Fu. 2023-11-27. Robust Diamond/\b{eta}-Ga2O3 Hetero-p-n-junction Via Mechanically Integrating Their Building Blocks. https://arxiv.org/abs/2311.16323

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