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arXiv · 2311.17494

Resolved Raman sideband cooling of a single optically trapped cesium atom

Zhuangzhuang Tian·Haobo Chang·Xin Lv·Mengna Yang·Zhihui Wang·Pengfei Yang·Pengfei Zhang·Gang Li·Tiancai Zhang
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Abstract

We developed a resolved Raman sideband cooling scheme that can efficiently prepare a single optically trapped cesium (Cs) atom in its motional ground states. A two-photon Raman process between two outermost Zeeman sublevels in a single hyperfine state is applied to reduce the phonon number. Our scheme is less sensitive to the variation in the magnetic field than the commonly used scheme where the two outermost Zeeman sublevels belonging to the two separate ground hyperfine states are taken. Fast optical pumping with less spontaneous emission guarantees the efficiency of the cooling process. After cooling for 50 ms, 82% of the Cs atoms populate their three-dimensional ground states. Our scheme improves the long-term stability of Raman sideband cooling in the presence of magnetic field drift and is thus suitable for cooling other trapped atoms or ions with abundant magnetic sublevels.

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Zhuangzhuang Tian, Haobo Chang, Xin Lv, Mengna Yang, Zhihui Wang, Pengfei Yang, Pengfei Zhang, Gang Li, Tiancai Zhang. 2023-11-29. Resolved Raman sideband cooling of a single optically trapped cesium atom. https://arxiv.org/abs/2311.17494

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