Absence of backscattering in Fermi-arc-mediated conductivity of topological Dirac semimetal Cd$_{3}$As$_{2}$

Abstract

Having previously been the subject of decades of semiconductor research, cadmium arsenide has now reemerged as a topological material, realizing ideal three-dimensional Dirac points at the Fermi level. These topological Dirac points lead to a number of extraordinary transport phenomena, including strong quantum oscillations, large magnetoresistance, ultrahigh mobilities, and Fermi velocities exceeding graphene. The large mobilities persist even in thin films and nanowires of cadmium arsenide, suggesting the involvement of topological surface states. However, computational studies of the surface states in this material are lacking, in part due to the large 80-atom unit cell. Here we present the computed Fermi arc surface states of a cadmium arsenide thin film, based on a tight-binding model derived directly from the electronic structure. We show that despite the close proximity of the Dirac points, the Fermi arcs are very long and straight, extending through nearly the entire Brillouin zone. The shape and spin properties of the Fermi arcs suppress both back- and side- scattering at the surface, which we show by explicit integrals over the phase space. The introduction of a small symmetry-breaking term, expected in a strong electric field, gaps the electronic structure, creating a weak topological insulator phase that exhibits similar transport properties. Crucially, the mechanisms suppressing scattering in this material differ from those in other topological materials such as Weyl semimetals and topological insulators, suggesting a new route for engineering high-mobility devices based on Dirac semimetal surface states.