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arXiv · 2312.03713

Measuring the Kapitza Resistance between a Passivated Semiconductor and Liquid Helium

Babak Mohammadian·Mark A. McCulloch·Valerio Gilles·Thomas Sweetnam·Lucio Piccirilo
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Abstract

In this paper, we describe an experimental investigation into the effect of passivation layer thickness on heat dissipation between a quartz substrate and liquid helium. We have observed that by depositing SiN from 0 to 240 nm, the Kapitza resistance increases by 0.0365 m^2.K/W per nanometer more than for an unpassivated semiconductor. We hypothesize that this increase in Kapitza resistance represents an additional barrier to the cooling of semiconductor devices in liquid helium.

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Babak Mohammadian, Mark A. McCulloch, Valerio Gilles, Thomas Sweetnam, Lucio Piccirilo. 2023-11-16. Measuring the Kapitza Resistance between a Passivated Semiconductor and Liquid Helium. https://arxiv.org/abs/2312.03713

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