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arXiv · 2312.07202

Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer

San-Dong Guo·Yu-Ling Tao·Zi-Yang Zhuo·Gangqiang Zhu·Yee Sin Ang
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Abstract

The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal AFM monolayer. The design principle involves the introduction of layer-dependent electrostatic potential caused by out-of-plane external electric field, which can break the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$), producing spin splitting. The spin order of spin splitting can be reversed by regulating the direction of electric field. Based on first-principles calculations, the design principle can be verified in AFM $\mathrm{Cr_2CH_2}$. The layer-locked hidden Berry curvature can give rise to layer-Hall effect, including valley layer-spin Hall effect and layer-locked AVHE. Our works provide an experimentally feasible way to realize AVHE in AFM monolayer.

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San-Dong Guo, Yu-Ling Tao, Zi-Yang Zhuo, Gangqiang Zhu, Yee Sin Ang. 2023-12-12. Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer. https://arxiv.org/abs/2312.07202

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