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arXiv · 2312.13022

Computation of the spatial distribution of charge-carrier density in disordered media

Alexey V. Nenashev·Florian Gebhard·Klaus Meerholz·Sergei D. Baranovskii
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Abstract

The space- and temperature-dependent electron distribution $n(r,T)$ determines optoelectronic properties of disordered semiconductors. It is a challenging task to get access to $n(r,T)$ in random potentials, avoiding the time-consuming numerical solution of the Schrödinger equation. We present several numerical techniques targeted to fulfill this task. For a degenerate system with Fermi statistics, a numerical approach based on a matrix inversion and that based on a system of linear equations are developed. For a non-degenerate system with Boltzmann statistics, a numerical technique based on a universal low-pass filter and one based on random wave functions are introduced. The high accuracy of the approximate calculations are checked by comparison with the exact quantum-mechanical solutions.

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Alexey V. Nenashev, Florian Gebhard, Klaus Meerholz, Sergei D. Baranovskii. 2023-12-20. Computation of the spatial distribution of charge-carrier density in disordered media. https://arxiv.org/abs/2312.13022

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