Design and simulation of highly selective graphene-silicon nitride integrated dual-mode electro-absorption modulators

Abstract

We present the design, simulation and optimization of an integrated graphene-silicon nitride dual-mode modulator with high mode selectivity, optimized for a wavelength of 1.55 $\mu$m. The proposed device finds applications in mode division multiplexing systems, enabling the simultaneous and independent switching of two transverse electric modes supported by a buried dual-mode silicon nitride waveguide (TE$_0$ and TE$_1$). Three graphene-Al$_2$O$_3$-graphene nanoribbons are integrated on top of the waveguide. A central nanoribbon acts as a TE$_0$ mode absorber, while the two remaining nanoribbons located on the sides act as TE$_1$ mode absorbers. Their absorption is tuned by modifying the Fermi energy of graphene, which can be achieved through electrical doping. Thus, the corresponding nanoribbons operate as selective TE$_0$ and TE$_1$ modulators with a total energy consumption per unit length under 2430 pJ bit$^{-1}$ cm$^{-1}$. The modulation depth of each mode can reach up to 316 dB/cm and 273 dB/cm, respectively, while maintaining a selection ratio of 5.63$-$6.28 and extinction ratio of 204$-$248 dB/cm between them. Under thinner Al$_2$O$_3$ conditions, consumption below 607.5 pJ bit$^{-1}$ cm$^{-1}$ can be achieved with a marginal reduction of the optical performance in the TE$_1$ modulator. Overall, we report the design of a fully optimized integrated dual-mode modulator based on graphene tunable electro-absorption, opening the path toward integrated efficient multimode optical communication systems.