Mitigating the Effects of Au-Al Intermetallic Compounds Due to High-Temperature Processing of Surface Electrode Ion Traps

Abstract

Stringent physical requirements need to be met for the high performing surface-electrode ion traps used in quantum computing, sensing, and timekeeping. In particular, these traps must survive a high temperature environment for vacuum chamber preparation and support high voltage rf on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wire bond failure via breakage or high resistance, limiting the lifetime of a trap assembly to a single multi-day bake at 200$^{\circ}$C. Using traditional thick metal stacks to prevent intermetallic growth, however, can result in trap failure due to rf breakdown events. Through high temperature experiments we conclude that an ideal metal stack for ion traps is Ti20nm/Pt100nm/Au250nm which allows for a bakeable time of roughly 86 days without compromising the trap voltage performance. This increase in the bakable lifetime of ion traps will remove the need to discard otherwise functional ion traps when vacuum hardware is upgraded, which will greatly benefit ion trap experiments.