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arXiv · 2402.15176

The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

M. M. Khalilloev·B. O. Jabbarova·A. A. Nasirov
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Abstract

The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator technology has been numerically simulated. It is established that the RTN amplitude in the subthreshold region of gate voltages for a FinFET with a trapezoidal cross-section of the channel is significantly lower than that for the transistor with a rectangular cross-section of a channel. In addition, under the same conditions, the RTN amplitude at the threshold gate voltage in a junctionless FinFET is significantly lower than that in planar fully depleted and in usual FinFET.

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M. M. Khalilloev, B. O. Jabbarova, A. A. Nasirov. 2024-02-23. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET. https://doi.org/10.1134/s1063785019120216

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