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arXiv · 2403.07251

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

Megan Cowie·Procopios C. Constantinou·Neil J. Curson·Taylor J. Z. Stock·Peter Grutter
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Abstract

We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a $1/f$ power spectral trend. Such individual defect fluctuations at the Si/SiO$_2$ interface impair the performance and reliability of nanoscale semiconductor devices, and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss.

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Megan Cowie, Procopios C. Constantinou, Neil J. Curson, Taylor J. Z. Stock, Peter Grutter. 2024-03-12. Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface. https://arxiv.org/abs/2403.07251

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