Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 2403.12185

Halperin States of Particles and Holes in Ideal Time Reversal Invariant Pairs of Chern Bands and The Fractional Quantum Spin Hall Effect in Moir\'e MoTe$_2$

Inti Sodemann Villadiego
View original source ↗Read source document ↗Export metadata ↓

Abstract

An experiment in moir\'e MoTe$_2$ bilayers reported the first observation of a topologically ordered state with zero Hall conductivity and half of the edge conductance of a standard time-reversal invariant quantum spin Hall insulator. This state is believed to emerge at total filling one of a pair of bands with Chern numbers $C=\pm1$ related by time reversal symmetry. By viewing these bands as a pair of Landau levels with opposite magnetic fields, and starting from a parent magnet with one filled band, we demonstrate that a class of Halperin states constructed by adding particles to the empty Chern band and holes to the occupied Chern band have all the properties observed in MoTe$_2$. Remarkably, these states break time-reversal symmetry but have exactly zero Hall conductivity and helical edge conductance of $e^2/2h$. These states also feature a spinless composite fermion with the same charge as the electron but split equally between both valleys. In a standard Halperin 331 state, this particle would be a neutral Bogoliubov composite fermion. However, in our context this composite fermion is charged but remains itinerant because it is split into the two valleys that effectively experience opposite magnetic fields. The existence of such charged itinerant particles is a key difference between Landau levels with opposite magnetic fields and standard multi-components Landau levels, where all the itinerant particles are charge neutral, such as the magneto-roton of the Laughlin state or the Bogoliubov composite fermion of the Moore-Read state. When the electron density changes away from the ideal filling and these itinerant charged particles are added to the parent state, the disorder potential is less efficient at localizing them as compared to standard Lanadau levels. This can explain why the state in MoTe$_2$ did not display a robust Hall plateau upon changing the electron density.

Explore related subjects

cond-mat.mes-hallcond-mat.str-el

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Inti Sodemann Villadiego. 2024-03-18. Halperin States of Particles and Holes in Ideal Time Reversal Invariant Pairs of Chern Bands and The Fractional Quantum Spin Hall Effect in Moir\'e MoTe$_2$. https://doi.org/10.1103/physrevb.110.045114

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall↗
arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗
arXiv2026

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall↗