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arXiv · 2403.20210

Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface

Tomohiro Kikuta·Sachio Komori·Keiichiro Imura·Tomoyasu Taniyama
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Abstract

In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change of the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching (the SSV effect) is based on the interplay between superconductivity and magnetism. Fast and large resistive switching associated with the Tc-switching is suitable for nonvolatile cryogenic memory applications. However, external magnetic field-based operation of SSVs is hindering their miniaturization, and therefore, electric field control of the SSV effect is desired. Here, we report epitaxial growth of a La0.67Ca0.33MnO3/YBa2Cu3O7/La0.67Ca0.33MnO3 SSV on a piezo-electric [Pb(Mg0.33Nb0.67)O3]0.7-[PbTiO3]0.3 (001) substrate and demonstrate electric field control of the SSV effect. Electric field-induced strain-transfer from the piezo-electric substrate increases the magnetization and Tc of the SSV, and leads to an enhancement of the magnitude of Tc-switching. The results are promising for the development of magnetic-field-free superconducting spintronic devices, in which the S/F interaction is not only sensitive to the magnetization alignment but also to an applied electric field.

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Tomohiro Kikuta, Sachio Komori, Keiichiro Imura, Tomoyasu Taniyama. 2024-03-29. Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface. https://doi.org/10.1063/5.0211769

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