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arXiv · 2405.03156

Strain Induced Kramers-Weyl Phase in III-V Zinc Blende Systems

Denis Aglagul·Jian Shi
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Abstract

We present theoretical observations on the topological nature of strained III-V semiconductors. By $k \cdot p$ perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers-Weyl node at the $\Gamma$ point. It is theoretically shown a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions.

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Denis Aglagul, Jian Shi. 2024-05-06. Strain Induced Kramers-Weyl Phase in III-V Zinc Blende Systems. https://arxiv.org/abs/2405.03156

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