Memory Capacity Analysis of Time-delay Reservoir Computing Based on Silicon Microring Resonator Nonlinearities

Abstract

Silicon microring resonators (MRRs) have shown strong potential in acting as the nonlinear nodes of photonic reservoir computing (RC) schemes. By using nonlinearities within a silicon MRR, such as the ones caused by free-carrier dispersion (FCD) and thermo-optic (TO) effects, it is possible to map the input data of the RC to a higher dimensional space. Furthermore, by adding an external waveguide between the through and add ports of the MRR, it is possible to implement a time-delay RC (TDRC) with enhanced memory. The input from the through port is fed back into the add port of the ring with the delay applied by the external waveguide effectively adding memory. In a TDRC, the nodes are multiplexed in time, and their respective time evolutions are detected at the drop port. The performance of MRR-based TDRC is highly dependent on the amount of nonlinearity in the MRR. The nonlinear effects, in turn, are dependent on the physical properties of the MRR as they determine the lifetime of the effects. Another factor to take into account is the stability of the MRR response, as strong time-domain discontinuities at the drop port are known to emerge from FCD nonlinearities due to self-pulsing (high nonlinear behaviour). However, quantifying the right amount of nonlinearity that RC needs for a certain task in order to achieve optimum performance is challenging. Therefore, further analysis is required to fully understand the nonlinear dynamics of this TDRC setup. Here, we quantify the nonlinear and linear memory capacity of the previously described microring-based TDRC scheme, as a function of the time constants of the generated carriers and the thermal of the TO effects. We analyze the properties of the TDRC dynamics that generate the parameter space, in terms of input signal power and frequency detuning range, over which conventional RC tasks can be satisfactorily performed by the TDRC scheme.