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arXiv · 2407.01454

Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields

Eyüp Yalcin·Ina V. Kalitukha·Ilya A. Akimov·Vladimir L. Korenev·Olga S. Ken·Jorge Puebla·Yoshichika Otani·Oscar M. Hutchings·Daniel J. Gillard·Alexander I. Tartakovskii·Manfred Bayer
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Abstract

We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe$_2$ layer.

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Eyüp Yalcin, Ina V. Kalitukha, Ilya A. Akimov, Vladimir L. Korenev, Olga S. Ken, Jorge Puebla, Yoshichika Otani, Oscar M. Hutchings, Daniel J. Gillard, Alexander I. Tartakovskii, Manfred Bayer. 2024-07-01. Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields. https://doi.org/10.1103/physrevb.110.l161405

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