arXiv · 2407.11642
Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities
Abstract
On-chip emitters that can generate single and entangled photons are essential building blocks for developing photonic quantum information processing technologies in a scalable fashion. Semiconductor quantum dots (QDs) are attractive candidates that emit high-quality quantum states of light on demand, however at a rate limited by their spontaneous radiative lifetime. In this study, we utilize the Purcell effect to demonstrate up to a 38-fold enhancement in the emission rate of InAs QDs by coupling them to metal-clad GaAs nanopillars. These cavities, featuring a sub-wavelength mode volume of 4.5x10-4 ({\lambda}/n)3 and low quality factor of 62, enable Purcell-enhanced single-photon emission across a large bandwidth of 15 nm. The broadband nature of the cavity eliminates the need for implementing tuning mechanisms typically required to achieve QD-cavity resonance, thus relaxing fabrication constraints. Ultimately, this QD-cavity architecture represents a significant stride towards developing solid-state quantum emitters generating near-ideal single-photon states at GHz-level repetition rates.
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Abhiroop Chellu, Subhajit Bej, Hanna Wahl, Hermann Kahle, Topi Uusitalo, Roosa Hytönen, Heikki Rekola, Jouko Lang, Eva Schöll, Lukas Hanschke, Patricia Kallert, Tobias Kipp, Christian Strelow, Marjukka Tuominen, Klaus D. Jöns, Petri Karvinen, Tapio Niemi, Mircea Guina, Teemu Hakkarainen. 2024-07-16. Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities. https://arxiv.org/abs/2407.11642
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